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Single Layer Graphene on Si/SiO2 substrate

  1. Graphene Type: Single-layer graphene.
  2. Substrate Material: Silicon wafer with a silicon dioxide (SiO2) layer.
  3. SiO2 Layer Thickness: Commonly around 300 nm.
  4. Graphene Quality:
    • Coverage: Close to 100% of the substrate area.
    • Continuity: Minimal tears or disruptions.
  5. Optical Properties: High transparency with characteristic interference colors due to the SiO2 thickness.
  6. Electrical Properties: High carrier mobility.
  7. Dimensions: Substrate size can vary, typically ranging from small squares (e.g., 1×1 cm) to larger wafers.

Product Overview

Our Single Layer Graphene on Si/SiO2 Substrate integrates the exceptional conductivity and mechanical properties of graphene with the robust, insulating characteristics of silicon dioxide, all situated on a silicon wafer. This high-quality substrate is specifically designed for use in high-precision fields such as nanoelectronics, MEMS (Micro-Electro-Mechanical Systems), and photonics, where performance and reliability are paramount.

Key factor

  • High-Quality Single Layer Graphene: Offers outstanding electrical conductivity and transparency.
  • Silicon Dioxide Insulation: Provides an excellent insulating layer, essential for managing electronic properties and device isolation.
  • Silicon Substrate Stability: Silicon enhances the overall stability and ease of handling, crucial for delicate electronic applications.
  • Precision Device Compatibility: The standard Si/SiO2 substrate is compatible with existing semiconductor processes, facilitating integration into advanced microelectronic devices.

Applications

  • Nanoelectronics: Utilized in the development of ultra-fast transistors, sensors, and integrated circuits that benefit from graphene's high electron mobility.
  • Photonics: Key for applications in optoelectronic devices including waveguides, modulators, and ultra-sensitive photodetectors.
  • Quantum Computing: Provides a foundational layer for quantum devices where material purity and electronic properties are critical.
  • Research and Development: Ideal for academic and industrial research into graphene's properties and its application in semiconductor technologies.

Advantages

  • Enhanced Electrical Performance: Enables superior device operation thanks to the high conductivity and minimal electronic interference from the substrate.
  • High Compatibility: Easily integrates into standard fabrication processes used in the semiconductor industry, reducing development time and costs.
  • Robust and Reliable: Offers a stable base that withstands rigorous processing conditions, enhancing device lifespan and performance.
  • Innovative Applications: Opens up possibilities for developing new technologies that leverage the unique interactions between graphene and substrate materials.

Why HIYKA

Our Single Layer Graphene on Si/SiO2 Substrate is at the cutting edge of material technology, offering a sophisticated solution that enhances the capabilities of electronic devices across a wide range of industries. By incorporating this substrate into your product development, you can achieve unparalleled performance and precision.

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